Inhomogeneous reaction between epitaxial Al and Si(111) revealed by scanning Internal Photoemission Microscopy (IPEM)
Conference
·
OSTI ID:468839
- Tokyo Metropolitan Univ. (Japan)
- Microelectronics Research Labs., Ibaraki (Japan)
Aluminum is one of the most important materials for the Si LSI metallization. An epitaxial growth of Al films on Si can be achieved since the lattice constant ratio between Al and Si is approximately given by 3 to 4. It is expected that epitaxial Al films are highly stable against thermal annealing. However, epitaxial-Al/Si contacts have sometimes shown a significant change in Schottky barrier height (SBH) and interface structure upon annealing. The objective of this paper is to clarify the relation between the SBH inhomogeneity and the thermally induced reaction between Al and Si through grain boundaries. The microscope SBH distribution was measured by using scanning internal-photoemission microscopy (IPEM).
- OSTI ID:
- 468839
- Report Number(s):
- CONF-960877--
- Country of Publication:
- United States
- Language:
- English
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