Microscopic correspondence between Schottky-barrier height and interface morphology at thermally degraded Al/(111)Si contacts
Conference
·
OSTI ID:405551
- Tokyo Metropolitan Univ., Hachiohji, Tokyo (Japan)
- Microelectronics Research Labs., Tsukuba, Ibaraki (Japan)
We have measured microscopic distribution of Schottky barrier heights (SBHs) at epitaxial-Al/n-Si(111) interfaces by using scanning internal-photoemission microscopy. The SBH distribution at the interface was homogeneous in the as-deposited state. After annealing, the inhomogeneity of SBH arose and it caused the discrepancy between two SBHs determined by I-V and C-V methods. The thickness distribution of recrystallized p{sup +}-Si layer, formed during annealing process, was responsible for the distribution of SBH.
- OSTI ID:
- 405551
- Report Number(s):
- CONF-951231--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Inhomogeneous Schottky barriers at Ag/Si(111) and Ag/Si(100) interfaces
Inhomogeneous reaction between epitaxial Al and Si(111) revealed by scanning Internal Photoemission Microscopy (IPEM)
The Schottky barrier modulation at PtSi/Si interface by strain and structural deformation
Journal Article
·
Wed May 01 00:00:00 EDT 1996
· Journal of Applied Physics
·
OSTI ID:283797
Inhomogeneous reaction between epitaxial Al and Si(111) revealed by scanning Internal Photoemission Microscopy (IPEM)
Conference
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:468839
The Schottky barrier modulation at PtSi/Si interface by strain and structural deformation
Journal Article
·
Sat Aug 15 00:00:00 EDT 2015
· AIP Advances
·
OSTI ID:22492292