Determination of the interface structure of CdTe(111) on Si(100) using Z-contrast imaging and EELS

Conference · Tue Dec 31 04:00:00 EST 1996

OSTI ID:468756

Wallis, D J; Sivananthan, S; Browning, N D ^[1]

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1. Univ. of Illinois, Chicago, IL (United States); and others

The interface structure at the CdTe(111)/Si(100) interface has been investigated using Z-contrast imaging in a VG HB-603 STEM and Electron Energy Loss Spectroscopy (EELS) in a VG HB-501 STEM. Figure 1 shows a Z-contrast image of the CdTe/Si interface. Due to the incoherent nature of the Z-contrast imaging process each atomic column may be considered to scatter independently allowing individual columns to be identified. The intensity of the columns also provides evidence for the chemical nature of individual columns since image intensity is related to the mean square atomic number of a column. Thus, the CdTe film can be identified since it is much brighter than the Si substrate. The 1.3{angstrom} resolution of the HB-603 allows the {open_quotes}dumbbells{close_quotes} in both silicon and CdTe to be resolved and on careful inspection the polarity of the CdTe {open_quotes}dumbbell{close_quotes} may be discerned in the bulk of the film. This polarity is maintained right up to the CdTe/Si interface showing that the film is Te terminated at the substrate.

• OSTI ID: 468756
• Report Number(s): CONF-960877--; CNN: Grant DMR-9503877
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
IMAGES
INTERFACES
MICROSTRUCTURE
SEMICONDUCTOR MATERIALS
SILICON
SPECTRA