PHOTOSENSITIVE GAS PHASE ETCHING OF SEMICONDUCTORS BY SELECTIVE RADIATION
Patent
·
OSTI ID:4685599
A method for fabricating diffused semiconductor devices and for shaping a resistant overlayer for controlling a subsequent diffusion of significant impurities into a semiconductor substrate is presented. The method is based on the fact that IF/sub 5/ is particularly sensitive to appropriate radiation in the form of F/sub 2/O. Examples of the technique are described. (P.C.H.)
- Research Organization:
- Originating Research Org. not identified
- NSA Number:
- NSA-17-029276
- Assignee:
- Bell Telephone Labs., Inc.
- Patent Number(s):
- US 3095332
- OSTI ID:
- 4685599
- Country of Publication:
- United States
- Language:
- English
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