FIELD-EFFECT TRANSISTORS IN CHARGE SENSITIVE AMPLIFIERS
Technical Report
·
OSTI ID:4674209
Field-effect transistors are investigated as low noise active devices for charge sensitive amplifiers. Noise sources, signal-to-noise relations, and charge sensitive amplifier circuits for field-effect transistors are considered. Measurements show an equivalent noise charge of 60 rms electrons per pF for low capacitance (3 pF) devices and 20 rms electrons per pF for high capacitance (30 pF) devices. Operation at low temperatures to -200 c- C is possible. (auth)
- Research Organization:
- Brookhaven National Lab., Upton, N.Y.
- DOE Contract Number:
- AT(30-2)-GEN-16
- NSA Number:
- NSA-17-025541
- OSTI ID:
- 4674209
- Report Number(s):
- BNL-6953
- Country of Publication:
- United States
- Language:
- English
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