State of the Art of Low Noise Amplifiers for Semiconductor Radiation Detectors
The state of the art of charge amplifiers with respect to noise, rise time, gain linearity, and response is determined by the field-effect transistors, by the high-frequency bipolar transistors, by the feedback {bias) resistor, and by the dielectrics in the input circuit. A condensed discussion of the relations between amplifier properties and parameters of these devices is presented. Special attention is given to identification of various noise sources. Some data on field effect transistors, resistors and dielectrics are given. Simultaneous achievement of low noise, high speed, linearity, dynamic range and a well defined time response is considered. A rise time of 15 nanoseconds was obtained with a detector capacitance of 50 pF. A short rise time of this order of magnitude is of interest for timing and for studies of charge collection processes in semiconductor detectors. A method is given for measurement of gain nonlinearity under simulated conditions of high pulse rate. It is shown that the gain nonlinearity is related to the rise time.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- DOE Contract Number:
- SC0012704
- OSTI ID:
- 1867189
- Report Number(s):
- BNL-222986-2022-COPA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Low-power low-noise BJT amplifier for nuclear applications
FIELD-EFFECT TRANSISTORS IN CHARGE SENSITIVE AMPLIFIERS