Lattice vibrations and phonon-plasmon coupling in Raman spectra of p-type In{sub 0.53}Ga{sub 0.47}As
Journal Article
·
· Physical Review, B: Condensed Matter
- A. F. Ioffe Physical-Technical Institute RAS, 194021, Politechnicheskaya 26, St. Petersburg (Russia)
- Electrical Engineering Department, Texas Tech University, Lubbock, Texas 794009 (United States)
Raman spectra of p-type In{sub 0.53}Ga{sub 0.47}As with doping levels ranging from p=2{times}10{sup 17} to 5{times}10{sup 19} cm{sup {minus}3} have been investigated. Analysis of the Raman line shape and its dependence on the free-hole density demonstrates four-mode behavior of optical phonons. Based on the oscillator strength and Faust-Henry factors of the optical phonons determined from the Raman data, and lattice-dynamic calculations of the phonon dispersion relations in ordered structures of InGaAs{sub 2}, we show a relationship between the observed four-mode behavior and short-range order phase-separation effects. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 467370
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 8 Vol. 55; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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