Metallization schemes for dielectric thin films capacitors
- Sandia National Laboratory, Albuquerque, New Mexico 87185 (United States)
A detailed analysis of Pt/Ti, Pt/TiO{sub 2}, and Pt/ZrO{sub 2} electrodes was carried out to develop a bottom electrode stack for sol-gel derived thin films capacitors. For the Pt/Ti stack, the choice of layer thickness and deposition temperature is found to affect adhesion to the SiO{sub 2}/Si substrate as well as the extent of hillock formation and Pt{endash}Ti interaction. By using elevated temperature deposition, Pt films close to 1 {mu}m in thickness can be produced with relatively good adhesion and morphological stability using Ti adhesion layers. In addition, Pt films grown on ZrO{sub 2} and TiO{sub 2} adhesion layers exhibit little morphological change and no degradation in sheet resistance after annealing at 650{degree}C. However, neither ZrO{sub 2} nor TiO{sub 2} are as effective as Ti metal in promoting Pt adhesion. Experiments aimed at establishing a correlation between hillock formation and capacitor yield revealed two important results. First, the behavior of Pt/Ti stacks during annealing in air is markedly different from their behavior during PZT film crystallization. Second, preannealing of the Pt/Ti in air prior to PZT film growth actually improves capacitor yield, even though hillock formation occurs during the preannealing treatment. Implications of these results regarding the role of hillocks in controlling capacitor yield are discussed. {copyright} {ital 1997 Materials Research Society.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 467268
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 2 Vol. 12; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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