Study of nitrogen implanted amorphous hydrogenated carbon thin films by variable-energy positron annihilation spectroscopy
- Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, 22453-970, Rio de Janeiro, RJ (Brazil)
- Dipartimento di Fisica, Universita di Trento, 38050, Povo, TN (Italy)
- Programa de Engenharia Metalurgica e de Materiais, COPPE, UFRJ 21910-970, Rio de Janeiro, RJ (Brazil)
Hard amorphous hydrogenated carbon ({ital a}-C:H) films deposited by self-bias glow discharge were implanted at room temperature with 70 keV nitrogen ions at fluences between 2.0 and 9.0{times}10{sup 16} N/cm{sup 2}. The implanted samples were analyzed by positron Doppler broadening annihilation spectroscopy to determine the voids distribution. For samples implanted with 2.0{times}10{sup 16} N/cm{sup 2} the defect distribution is broader than the vacancies depth profile predicted by Monte Carlo simulation. For higher fluences we observed a reduction of the defect density. These results are discussed in terms of a competition between two processes: ion induced defects and structural modifications induced in the films due to ion implantation. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 467213
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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