Temperature dependent electron beam induced current experiments on chalcopyrite thin film solar cells
- Hahn-Meitner Institut, Alteilung Grenzflaechen, Glienicker Str. 100, 14109 Berlin (Germany)
- Uppsala University, Teknikum, P.B. 534, S-75121 Uppsala (Sweden)
Electron-beam-induced current (EBIC) profiles of Mo/CuInX{sub 2}/CdS/ZnO thin film solar cells with X=Se, S were recorded at different temperatures. We measure the collection efficiency of cells as a function of the beam energy and subsequently identify the depth dependent collection function. For a CuInS{sub 2} based cell, charge collection is maintained by diffusion transport of minority carriers to the junction with an effective diffusion length of 1.3{plus_minus}0.2 {mu}m. This value is independent on temperature between 123 and 373 K. A CuInSe{sub 2} based cell exhibits increased collection of charge carriers created at the back contact on decreasing temperature. The temperature variation of the EBIC profiles is discussed considering the effect of bulk and grain boundary recombination. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 467158
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 70; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CADMIUM SELENIDES
CADMIUM SULFIDES
CHALCOPYRITE
CHARGE CARRIERS
COPPER SELENIDE SOLAR CELLS
COPPER SULFIDE SOLAR CELLS
DIFFUSION LENGTH
EFFICIENCY
ELECTRON BEAMS
GRAIN BOUNDARIES
INDIUM SELENIDES
INDIUM SULFIDES
RECOMBINATION
SCANNING ELECTRON MICROSCOPY
TEMPERATURE DEPENDENCE
THIN FILMS