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Effects of the concentration of Ga on junction formation in thin-film ZnO/CdS/CuIn{sub X}Ta{sub 1{minus}x}Se{sub 2}/Mo photovoltaic devices

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OSTI ID:417674
; ; ; ; ;  [1]
  1. National Renewable Energy Lab., Golden, CO (United States)

Charge-collection microscopy (CCM)--commonly known as electron-beam-induced current [EBIC] microscopy--in a scanning electron microscope (SEM) was used to obtain charge-collection efficiency profiles of cleaved thin-film ZnO/CdS/CuIn{sub X}Ga{sub 1{minus}x}Se{sub 2}/Mo photovoltaic devices on glass substrates, with x varied between 0 and 100%. The authors observed considerable variation in the EBIC peak position, the uniformity (between and within devices), and overall charge-collection profile of the junction as a function of Ga concentration. Whereas using only CuInSe{sub 2} (CIS) absorber material results in a rather wide and buried junction in the CIS, the systematic addition of Ga to the p-CuInSe{sub 2} matrix affects the conductivity type of the material, thereby creating an increasingly abrupt, uniform, and shallow junction near the heteroface. Although the substitution of Ga for In improves overall device performance up to {approximately}X = 25% and the V{sub oc} continues to improve, the J{sub SC}, FF, and device efficiency degrade with additional Ga.

DOE Contract Number:
AC36-83CH10093
OSTI ID:
417674
Report Number(s):
CONF-960401--; ISBN 1-55899-329-0
Country of Publication:
United States
Language:
English