Effects of the concentration of Ga on junction formation in thin-film ZnO/CdS/CuIn{sub X}Ta{sub 1{minus}x}Se{sub 2}/Mo photovoltaic devices
- National Renewable Energy Lab., Golden, CO (United States)
Charge-collection microscopy (CCM)--commonly known as electron-beam-induced current [EBIC] microscopy--in a scanning electron microscope (SEM) was used to obtain charge-collection efficiency profiles of cleaved thin-film ZnO/CdS/CuIn{sub X}Ga{sub 1{minus}x}Se{sub 2}/Mo photovoltaic devices on glass substrates, with x varied between 0 and 100%. The authors observed considerable variation in the EBIC peak position, the uniformity (between and within devices), and overall charge-collection profile of the junction as a function of Ga concentration. Whereas using only CuInSe{sub 2} (CIS) absorber material results in a rather wide and buried junction in the CIS, the systematic addition of Ga to the p-CuInSe{sub 2} matrix affects the conductivity type of the material, thereby creating an increasingly abrupt, uniform, and shallow junction near the heteroface. Although the substitution of Ga for In improves overall device performance up to {approximately}X = 25% and the V{sub oc} continues to improve, the J{sub SC}, FF, and device efficiency degrade with additional Ga.
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 417674
- Report Number(s):
- CONF-960401--; ISBN 1-55899-329-0
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ALUMINIUM
ANTIREFLECTION COATINGS
AUGER ELECTRON SPECTROSCOPY
CADMIUM SULFIDES
CHEMICAL COMPOSITION
COMPOSITE MATERIALS
COPPER SELENIDES
CURRENT DENSITY
ELECTRIC POTENTIAL
EXPERIMENTAL DATA
FABRICATION
FILL FACTORS
GALLIUM SELENIDES
GLASS
HEAT TREATMENTS
INDIUM SELENIDES
MAGNESIUM FLUORIDES
MOLYBDENUM
NICKEL
PERFORMANCE
QUANTUM EFFICIENCY
SCANNING ELECTRON MICROSCOPY
SOLAR CELLS
SPECTRAL RESPONSE
SUBSTRATES
ZINC OXIDES