Effects of substrate and Na concentration on device properties, junction formation, and film microstructure in CuInSe{sub 2} PV devices
- National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401 (United States)
Different concentrations of Na were systematically introduced into CuInSe{sub 2} (CIS) photovoltaic solar cell absorber material on different substrates (SLG, SiO{sub 2}/SLG, 7059, alumina) to: 1) determine the resultant effects on device properties, junction formation, and material microstructure; and 2) determine the optimal range of Na concentrations in the CIS films per specific substrate. In general, finished devices show improved V{sub oc}, J{sub sc}, and device efficiency, improved charge-collection efficiency and, possibly, increased grain size as a result of the coevaporation of 4 to 100 mg of Na{sub 2}Se during film deposition. However, a dramatic devolution set in with the addition of 235 mg of Na{sub 2}Se, and all the aforementioned parameters were either at, or worse than, their pre-Na-addition levels. Meanwhile, although the device microstructure improves with Na addition and, more importantly, the junction (as characterized by electron-beam-induced current) has become much more uniform and closer to the heteroface, all that reverses with the {open_quotes}Na overdose.{close_quotes} {copyright} {ital 1999 American Institute of Physics.}
- Research Organization:
- National Renewable Energy Laboratory
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 357201
- Report Number(s):
- CONF-980935--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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