Suppression of self-interstitials in silicon during ion implantation via in-situ photoexcitation

Technical Report · Wed Feb 01 04:00:00 EST 1995

DOI:https://doi.org/10.2172/46696· OSTI ID:46696

Ravi, J; Erokhin, Yu; Christensen, K; Rozgonyi, G A ^[1]; Patnaik, B K ^[2]; White, C W ^[3]

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1. North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
2. Univ. of North Carolina, Chapel Hill, NC (United States). Dept. of Physics and Astronomy
3. Oak Ridge National Labs., TN (United States). Solid State Div.

The influence of in-situ photoexcitation during low temperature implantation on self-interstitial agglomeration following annealing has been investigated using transmission electron microscopy (TEM). A reduction in the level of as-implanted damage determined by RBS and TEM occurs athermally during 150 keV self-ion implantation. The damage reduction following a 300 C anneal suggests that it is mostly divacancy related. Subsequent thermal annealing at 800 C resulted in the formation of (311) rod like defects or dislocation loops for samples with and without in-situ photoexcitation, respectively. Estimation of the number of self-interstitials bound by these defects in the sample without in-situ photoexcitation corresponds to the implanted dose; whereas for the in-situ photoexcitation sample a suppression of {approx}2 orders in magnitude is found. The kinetics of the athermal annealing process are discussed within the framework of either a recombination enhanced defect reaction mechanism, or a charge state enhanced defect migration and Coulomb interaction.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 46696
• Report Number(s): CONF-941144--119; ON: DE95009173; CNN: Grant DMR-9215538
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
CRYSTAL DEFECTS
EXPERIMENTAL DATA
INTEGRATED CIRCUITS
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
SILICON
SILICON IONS