Suppression of transient enhanced diffusion following {ital in} {ital situ} photoexcitation during boron ion implantation

Journal Article · Mon Oct 09 04:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.114752· OSTI ID:240458

Ravi, J; Erokhin, Y; Rozgonyi, G A ^[1]; White, C W ^[2]

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1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916 (United States)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: Oak Ridge National Laboratory
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 240458
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 67; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BORON ADDITIONS
DIFFUSION
INTERSTITIALS
ION IMPLANTATION
OPTICAL PUMPING
SILICON