Aluminum free GaInP/GaAs quantum well infrared photodetectors for long wavelength detection

Journal Article · Tue Dec 31 23:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118390· OSTI ID:463432

Jelen, C; Slivken, S; Hoff, J; Razeghi, M ^[1]; Brown, G J ^[2]

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1. Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
2. Wright Laboratory, Materials Directorate, WL/MLPO, Wright Patterson AFB, Ohio 45433-7707 (United States)

We demonstrate quantum well infrared photodetectors based on a GaAs/Ga{sub 0.51}In{sub 0.49}P superlattice structure grown by gas-source molecular beam epitaxy. Wafers were grown with varying well widths. Wells of 40, 65, and 75 {Angstrom} resulted in peak detection wavelengths of 10.4, 12.8, and 13.3 {mu}m with a cutoff wavelength of 13.5, 15, and 15.5 {mu}m, respectively. The measured peak and cutoff wavelengths match those predicted by eight band theoretical analysis. Measured dark currents were lower than equivalent GaAs/AlGaAs samples. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 463432
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 70; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ELECTRIC CURRENTS
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INFRARED RADIATION
MOLECULAR BEAM EPITAXY
PHOTODETECTORS
SUPERLATTICES