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GaAs/InGaP/AlGaAs quantum-well infrared photodetectors

Book ·
OSTI ID:94439
;  [1]
  1. Univ. of Cincinnati, OH (United States)

In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.

OSTI ID:
94439
Report Number(s):
CONF-940142--; ISBN 0-8194-1440-9
Country of Publication:
United States
Language:
English