GaAs/InGaP/AlGaAs quantum-well infrared photodetectors
Book
·
OSTI ID:94439
- Univ. of Cincinnati, OH (United States)
In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.
- OSTI ID:
- 94439
- Report Number(s):
- CONF-940142--; ISBN 0-8194-1440-9
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ALUMINIUM ARSENIDES
COMPARATIVE EVALUATIONS
DESIGN
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM PHOSPHIDES
INFRARED RADIATION
PERFORMANCE
PHOTODETECTORS
RADIATION DETECTION
SEMICONDUCTOR MATERIALS
SUPERLATTICES
THEORETICAL DATA
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ALUMINIUM ARSENIDES
COMPARATIVE EVALUATIONS
DESIGN
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM PHOSPHIDES
INFRARED RADIATION
PERFORMANCE
PHOTODETECTORS
RADIATION DETECTION
SEMICONDUCTOR MATERIALS
SUPERLATTICES
THEORETICAL DATA