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Voltage tunable two-color infrared detection using semiconductor superlattices.

Journal Article · · Proposed for publication in Applied Physics Letters.
DOI:https://doi.org/10.1063/1.1635981· OSTI ID:1005090
 [1];  [2];  [1];
  1. Princeton University, Princeton, NJ
  2. U. S. Army Research Laboratory, Adelphi, MD

We demonstrate a voltage tunable two-color quantum-well infrared photodetector (QWIP) that consists of multiple periods of two distinct AlGaAs/GaAs superlattices separated by AlGaAs blocking barriers on one side and heavily doped GaAs layers on the other side. The detection peak switches from 9.5 {micro}m under large positive bias to 6 {micro}m under negative bias. The background-limited temperature is 55 K for 9.5 {micro}m detection and 80 K for 6 {micro}m detection. We also demonstrate that the corrugated-QWIP geometry is suitable for coupling normally incident light into the detector.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1005090
Report Number(s):
SAND2003-3210J
Journal Information:
Proposed for publication in Applied Physics Letters., Journal Name: Proposed for publication in Applied Physics Letters. Journal Issue: 25 Vol. 83; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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