Multicolor voltage-tunable quantum-well infrared photodetector

Journal Article · Tue Nov 30 23:00:00 EST 1993 · IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/55.260791· OSTI ID:5301718

Liu, H C; Thompson, J R; Wasilewski, Z R; Buchanan, M ^[1]; Li, J; Simmons, J G ^[2]

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1. National Research Council, Ottawa, Ontario (Canada). Inst. for Microstructural Sciences
2. McMaster Univ., Hamilton, Ontario (Canada). Centre for Electrophotonic Materials and Devices

A novel concept of a quantum-well infrared photodetector (QWIP) with its spectral response peak tunable by an external voltage is described and tested experimentally. This multicolor detector structure is made by stacking conventional (one-color) QWIP's, separated by thin, heavily doped layers ([approximately]90 nm in the test structure). The most important feature is that external applied dc voltage is distributed among the different one-color QWIP's according to their dc resistances. Each one-color QWIP therefore turns on sequentially in the order determined by its resistance.

• OSTI ID: 5301718
• Journal Information: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 14:12; ISSN 0741-3106; ISSN EDLEDZ
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
DATA
DESIGN
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FABRICATION
INFORMATION
MATERIALS
NUMERICAL DATA
PHOTODETECTORS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS