Ferroelectric field effect in ultrathin SrRuO{sub 3} films

Journal Article · Wed Jan 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118203· OSTI ID:463422

Ahn, C H; Hammond, R H; Geballe, T H; Beasley, M R ^[1]; Triscone, J; Decroux, M; Fischer, O ^[2]; Antognazza, L; Char, K ^[3]

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1. Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)
2. DPMC University of Geneva, 1211 Geneva 4 (Switzerland)
3. Conductus Incorporated, Sunnyvale, California 94086 (United States)

We report the observation of a ferroelectric field effect in the conducting oxide SrRuO{sub 3} using Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3}/SrRuO{sub 3} epitaxial heterostructures. Upon reversing the polarization of the ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} layer, we measured a 9{percent} change in the resistance of a nominally 30 {Angstrom} SrRuO{sub 3} film at room temperature. This change was nonvolatile for a period of several days. Conductivity measurements taken between 4.2 and 300 K are consistent with n-type conduction throughout this temperature range. Hall effect measurements also yield n-type conduction, with n{approx}2{times}10{sup 22} electrons/cm{sup 3}, and furthermore allow us to understand quantitatively the magnitude of the observed resistivity change. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 463422
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRIC CONDUCTIVITY
FERROELECTRIC MATERIALS
HALL EFFECT
POLARIZATION
RUTHENIUM OXIDES
STRONTIUM OXIDES
TEMPERATURE DEPENDENCE
THIN FILMS