Formation and characteristics of Pb(Zr,Ti)O{sub 3} field-effect transistor with a SiO{sub 2} buffer layer

Journal Article · Wed Jan 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118190· OSTI ID:450187

Yu, J; Hong, Z; Zhou, W; Cao, G; Xie, J; Li, X ^[1]; Li, S; Li, Z ^[2]

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1. Department of Solid State Electronics, Huazhong University of Science and Technology, Hubei, Wuhan, 430074, Peoples Republic of (China)
2. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

Ferroelectric heterostructures of Au/Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3}/SiO{sub 2}/Si and Au/Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3}/Si have been fabricated by using laser ablation technique. Electrical properties of these ferroelectric field-effect transistors have been characterized through both the current vs voltage and capacitance vs voltage (C{endash}V) measurements. The C{endash}V characteristics of Au/Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3}/SiO{sub 2}/Si heterostructures demonstrate a polarization switching behavior, showing a memory window as much as 1 V at 1 kHz. In addition, the experimental results reveal that a SiO{sub 2} buffer layer is essential for memory properties in the Au/Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3}/SiO{sub 2}/Si gate structure. {copyright} {ital 1997 American Institute of Physics.}

• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 450187
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
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SILICON OXIDES
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