Ferroelectric field effect in SrCuO{sub 2} and SrRuO{sub 3} films

Journal Article · Sun Dec 01 04:00:00 EST 1996 · Journal of Low Temperature Physics

DOI:https://doi.org/10.1007/BF00753915· OSTI ID:443694

Ahn, C H; Hammond, R H; Geballe, T H ^[1]

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1. Stanford Univ., CA (United States); and others

The authors report on ferroelectric field effect experiments on Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3}/SrCuO{sub 2} and Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3}/SrRuO{sub 3} epitaxial heterostructures with an emphasis on the material characterization. Upon reversing the polarization of the Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} ferroelectric layer, they measured a nonvolatile change in the resistivity of ultra-thin layers of SrCuO{sub 2} and SrRuO{sub 3}. In thin SrRuO{sub 3} films (30 {Angstrom}) up to a 9% resistivity change has been observed at room temperature.

• Sponsoring Organization: USDOE
• OSTI ID: 443694
• Report Number(s): CONF-960808--
• Journal Information: Journal of Low Temperature Physics, Journal Name: Journal of Low Temperature Physics Journal Issue: 5-6 Vol. 105; ISSN 0022-2291; ISSN JLTPAC
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COPPER OXIDES
ELECTRIC CONDUCTIVITY
POLARIZATION
RUTHENIUM OXIDES
STRONTIUM OXIDES
THIN FILMS