Characterization of semiconductor tin dioxide film sensors prepared by the sol-gel method

Journal Article · Wed Nov 01 04:00:00 EST 1995 · Journal of Analytical Chemistry

OSTI ID:456729

Orlik, D R; Ivanovskaya, M I ^[1]; Kol, K D ^[2]

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1. Belarussian State Univ., Minsk (Russian Federation)
2. Giessen Univ. (Germany)

It is expedient to refine gas-sensing sensors with selective elements based on semiconducting metal oxides both by searching for new gas-sensitive materials and by modifying the synthesis conditions for known materials. Previously, the application of the sol-gel method was shown to be promising in synthesizing metal oxides (SnO{sub 2}, TiO{sub 2}, and In{sub 2}O{sub 3}) for the preparation of ceramic sensors. The use of sols of hydrated metal oxides stabilized with various additives for preparing sensitive elements of ceramic sensors provides these sensors with a number of advantages over those prepared by traditional methods form polycrystalline powders in polymer binders. As a rule known film sensors have been prepared by depositing an SnO{sub 2} film onto the substrate of the sensor.

• OSTI ID: 456729
• Journal Information: Journal of Analytical Chemistry, Journal Name: Journal of Analytical Chemistry Journal Issue: 11 Vol. 50; ISSN 1061-9348; ISSN JACTE2
• Country of Publication: United States
• Language: English

Related Subjects

40 CHEMISTRY
CARBON MONOXIDE
DETECTION
GASES
HYDROGEN
NITROUS OXIDE
SOL-GEL PROCESS
THIN FILMS
TIN OXIDES