Diffraction pattern of a defect: Two-dimensional angular correlation of positron-annihilation radiation studies of defects in semiconductors

Journal Article · Sat Feb 01 04:00:00 EST 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.55.4046· OSTI ID:450413

McMullen, T; Bishop, M F ^[1]

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1. Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284-2000 (United States)

Electron-positron momentum spectra of defects in semiconductors contain more information about the nature of the defects than has been recognized previously. Diffraction patterns that arise both from the nature of the electronic states and from the geometric structure can be seen in the simulated two-dimensional angular correlation of annihilation radiation spectra for positrons annihilating at a model vacancy in a tetrahedrally coordinated semiconductor. These should be experimentally observable in high-resolution spectra. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 450413
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 7 Vol. 55; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ANGULAR CORRELATION
ANNIHILATION
CRYSTAL DEFECTS
DIFFRACTION
DIFFRACTION METHODS
ELECTRONIC STRUCTURE
EMISSION SPECTRA
POSITRON REACTIONS
SEMICONDUCTOR MATERIALS