Photoluminescence and cathodoluminescence of ion implanted ZnS and ZnGa{sub 2}O{sub 4} phosphors
- Spire Corp., Bedford, MA (United States)
Photoluminescence (PL) and cathodoluminescence (CL) characteristics of ion implanted ZnS and ZnGa{sub 2}O{sub 4} phosphors have been investigated. The authors have demonstrated high efficiency, well-saturated red, green, and blue PL and CL in ZnGa{sub 2}O{sub 4} thin films implanted with Eu{sup +}, Mn{sup +}, and Ga{sup +} ions, respectively. The results indicate that the luminescence of these phosphorus is critically dependent on the post-implantation annealing conditions. Selective ion implantation of multi-color activators into a thin film phosphor host can replace multiple phosphor deposition and patterning steps, as originally demonstrated for multi-color thin film electroluminescent (TFEL) displays. Most luminescence centers can be implanted at a depth in the host material which is well-matched to the limited penetration range of UV excitation in plasma display panels (PDPs) or electrons under typical field emission display (FED) drive voltages. Thin films also have lower outgassing and better thermal conduction than powder phosphorus; diffuse reflectance measurements show that ion implantation can also texture the film surface in-situ, thus reducing wave-guiding.
- OSTI ID:
- 449470
- Report Number(s):
- CONF-960634--
- Country of Publication:
- United States
- Language:
- English
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