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Structural and optical characterization of terbium doped ZnGa{sub 2}O{sub 4} thin films deposited by RF magnetron sputtering

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4947959· OSTI ID:22608724
 [1]; ;  [1];  [2]
  1. Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India)
  2. Department of Physics, Nallamuthu Gounder Mahalingam College, Pollachi-642001 (India)
Tb{sup 3+} doped ZnGa{sub 2}O{sub 4} nanophosphor (21 nm) has been synthesized via low temperature polyol route and subsequently thin films of the same were deposited on glass and ITO substrates by RF magnetron sputtering. The films were characterized by X-ray Diffraction and luminescence measurements. The XRD pattern showed that Tb{sup 3+} doped ZnGa{sub 2}O{sub 4} nanophosphor has a cubic spinel phase. Luminescence behavior of the nanophosphor and as deposited sputtered film was investigated. The PL emission spectra of nanophosphor gave a broad ZnGa{sub 2}O{sub 4} host emission band along with a strong terbium emission and the thin films showed only broad host emission band and there was no terbium ion emission.
OSTI ID:
22608724
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1731; ISSN 0094-243X; ISSN APCPCS
Country of Publication:
United States
Language:
English

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