Elevated temperature irradiation of bipolar linear microcircuits

Journal Article · Sun Dec 01 04:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556920· OSTI ID:445492

Pease, R L ^[1]; Gehlhausen, M ^[2]

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1. RLP Research, Albuquerque, NM (United States)
2. NSWC Crane, IN (United States)

In this study three conventional bipolar linear microcircuits, the LM101A operational amplifier, the LM124 quad operational amplifier, and the LM139 quad voltage comparator, were irradiated at high dose rate, elevated temperature and the results compared to low dose rate, room temperature response. While the high dose rate degradation at elevated temperature was greater than the degradation at room temperature, it was not as great as the degradation at low dose rate. Therefore, a hardness assurance test using elevated temperature irradiation at higher dose rates, designed to bound the very low dose rate response, will probably have to include overtest.

• OSTI ID: 445492
• Report Number(s): CONF-960773--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
COMPARATOR CIRCUITS
EXPERIMENTAL DATA
MICROELECTRONIC CIRCUITS
OPERATIONAL AMPLIFIERS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
TEMPERATURE DEPENDENCE