CMOS inverter design-hardened to the total dose effect
- Universite Montpellier II/CNRS (France). Lab. d`Informatique de Robotique et de Microelectronique
This paper reports and discusses the experimental behavior of two inverter structures Rad-Hardened by Design to {sup 60}Co irradiation. The authors use the results on a set of basic circuits and transistors exposed to the same total doses as these structures to establish the effective formation conditions of the parasitic channel. Then this leakage evolution is related to the gate voltage history under irradiation. Finally, they take advantage of this intrinsic degradation property to propose a new Design Rad Hardened (DRH) cell. This structure considerably limits the Low Noise Margin degradation, helps to maintain the logic functionality with a High Output level and improves both the rad-tolerance and the static power consumption.
- OSTI ID:
- 445483
- Report Number(s):
- CONF-960773--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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