Radiation effect characterization and test methods of single-chip and multi-chip stacked 16Mbit DRAMs

Journal Article · Sat Nov 30 23:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556894· OSTI ID:445467

LaBel, K A; Gates, M M; Moran, A K ^[1]; Kim, H S ^[2]; Seidleck, C M ^[3]; Marshall, P; Kinnison, J; Carkhuff, B

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1. NASA/Goddard Space Flight Center, Greenbelt, MD (United States)
2. Jackson and Tull, Seabrook, MD (United States)
3. Hughes/STX, Seabrook, MD (United States)

This paper presents radiation effects characterization performed by the NASA Goddard Space Flight Center (GSFC) on spaceflight candidate 16Mbit DRAMs. This includes heavy ion, proton, and Co60 irradiations on single-chip devices as well as proton irradiation of a stacked DRAM module. Lastly, a discussion of test methodology is undertaken.

• OSTI ID: 445467
• Report Number(s): CONF-960773--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
EXPERIMENTAL DATA
GAMMA RADIATION
HEAVY IONS
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
PROTONS
TESTING