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Heterojunction blocking contacts in MOCVD grown Hg{sub 1{minus}x}Cd{sub x}Te long wavelength infrared photoconductors

Journal Article · · IEEE Transactions on Electron Devices
DOI:https://doi.org/10.1109/16.557711· OSTI ID:445409
; ; ;  [1]
  1. Univ. of Western Australia, Nedlands, Western Australia (Australia). Dept. of Electrical and Electronic Engineering

The theoretical and experimental performance of Hg{sub 1{minus}x}Cd{sub x}Te long wavelength infrared (LWIR) photoconductors fabricated on two-layer heterostructures grown by in situ MOCVD has been studied. It is shown that heterojunction blocking contact (HBC) photoconductors, consisting of wider bandgap Hg{sub 1{minus}x}Cd{sub x}Te on an LWIR absorbing layer, give improved responsivity, particularly at higher applied bias, when compared with two-layer photoconductors incorporating n{sup +}/n contacts.

OSTI ID:
445409
Journal Information:
IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 2 Vol. 44; ISSN IETDAI; ISSN 0018-9383
Country of Publication:
United States
Language:
English

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