Heterojunction blocking contacts in MOCVD grown Hg{sub 1{minus}x}Cd{sub x}Te long wavelength infrared photoconductors
Journal Article
·
· IEEE Transactions on Electron Devices
- Univ. of Western Australia, Nedlands, Western Australia (Australia). Dept. of Electrical and Electronic Engineering
The theoretical and experimental performance of Hg{sub 1{minus}x}Cd{sub x}Te long wavelength infrared (LWIR) photoconductors fabricated on two-layer heterostructures grown by in situ MOCVD has been studied. It is shown that heterojunction blocking contact (HBC) photoconductors, consisting of wider bandgap Hg{sub 1{minus}x}Cd{sub x}Te on an LWIR absorbing layer, give improved responsivity, particularly at higher applied bias, when compared with two-layer photoconductors incorporating n{sup +}/n contacts.
- OSTI ID:
- 445409
- Journal Information:
- IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 2 Vol. 44; ISSN IETDAI; ISSN 0018-9383
- Country of Publication:
- United States
- Language:
- English
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