In-situ spectroscopic ellipsometry for real time composition control of Hg{sub 1{minus}x}Cd{sub x}Te grown by molecular beam epitaxy
Book
·
OSTI ID:323903
- Raytheon TI Systems, Sensors and Infrared Lab., Dallas, TX (United States)
- Texas Instruments Inc., Dallas, TX (United States). Components and Materials Research Center
Spectral ellipsometry (SE) was applied to in situ composition control of Hg{sub 1{minus}x}Cd{sub x}Te grown by molecular beam epitaxy (MBE), and the impact of surface topography of the Hg{sub 1{minus}x}Cd{sub x}Te layers on the accuracy of SE was investigated. Of particular importance is the presence of surface defects, such as voids in MBE-Hg{sub 1{minus}x}Cd{sub x}Te layers. While dislocations do not have any significant impact on the dielectric functions, the experimental data in this work show that MBE-Hg{sub 1{minus}x}Cd{sub x}Te samples having the same composition, but different void densities, have different effective dielectric functions.
- OSTI ID:
- 323903
- Report Number(s):
- CONF-971201--
- Country of Publication:
- United States
- Language:
- English
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