Auger electron spectroscopy analysis of SiC-whisker surfaces and SiC-whisker/alumina interfaces

Journal Article · Sat Apr 01 04:00:00 EST 1995 · Journal of Materials Research

DOI:https://doi.org/10.1557/JMR.1995.1016· OSTI ID:44511

Braski, D N; Alexander, K B ^[1]

---

1. Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6064 (United States)

Auger electron spectroscopy (AES) has been used to examine as-received and oxidized silicon carbide whiskers and their respective whisker/matrix interfaces after fabrication into SiC-whisker-reinforced alumina composites. As-received whisker surfaces exhibited a 2--3 nm-thick near-surface region that was C-rich. Oxygen was detected at the outer surface, but diminished to near zero within 25 nm of the surface. Oxidized whiskers had 60 nm-thick SiO{sub 2} surface layers, which was in agreement with the transmission electron microscopy observations. The whisker/matrix interfaces in both composites consisted of thin ({lt}0.5 nm) layers of a C--Si--O noncrystalline material. The thick SiO{sub 2} layers on the oxidized whiskers were ejected from the interfaces during hot-pressing. It was concluded that (i) the higher toughness of the composite fabricated with as-received SiC whiskers may be related to the higher C and lower O in its SiC{sub {ital w}}/Al{sub 2}O{sub 3} interfaces, and (ii) interface composition cannot be reliably predicted using the surface composition of free whiskers prior to fabrication.

• Research Organization: Oak Ridge National Laboratory
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 44511
• Journal Information: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 4 Vol. 10; ISSN JMREEE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
AUGER ELECTRON SPECTROSCOPY
COMPOSITE MATERIALS
DIFFUSION
FRACTURE PROPERTIES
INTERFACES
MICROSTRUCTURE
SILICON CARBIDES
SURFACES
WHISKERS