PRISM -- A tool for modelling proton energy deposition in semiconductor materials

Journal Article · Sat Nov 30 23:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556858· OSTI ID:443043

Oldfield, M K; Underwood, C I ^[1]

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1. Univ. of Surrey (United Kingdom). UoSAT Satellite Engineering Research Group

This paper presents a description of, and test results from, a new PC based software simulation tool PRISM (Protons in Semiconductor Materials). The model describes proton energy deposition in complex 3D sensitive volumes of semiconductor materials. PRISM is suitable for simulating energy deposition in surface-barrier detectors and semiconductor memory devices, the latter being susceptible to Single-Event Upset (SEU) and Multiple-Bit Upset (MBU). The design methodology on which PRISM is based, together with the techniques used to simulate ion transport and energy deposition, are described. Preliminary test results used to analyze the PRISM model are presented.

• OSTI ID: 443043
• Report Number(s): CONF-960773--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
99 GENERAL AND MISCELLANEOUS
P CODES
PHYSICAL RADIATION EFFECTS
PROTON TRANSPORT
SEMICONDUCTOR MATERIALS
SEMICONDUCTOR STORAGE DEVICES
SURFACE BARRIER DETECTORS