Process of preparing tritiated porous silicon
Patent
·
OSTI ID:441854
A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.
- Research Organization:
- Univ. of Chicago, IL (United States)
- DOE Contract Number:
- W-31109-ENG-38
- Assignee:
- Univ. of Chicago, IL (United States)
- Patent Number(s):
- US 5,604,162/A/
- Application Number:
- PAN: 8-671,325
- OSTI ID:
- 441854
- Resource Relation:
- Other Information: PBD: 18 Feb 1997
- Country of Publication:
- United States
- Language:
- English
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