Process of preparing tritiated porous silicon
Patent
·
OSTI ID:870840
- Downers Grove, IL
A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL
- DOE Contract Number:
- W-31109-ENG-38
- Assignee:
- University of Chicago (Chicago, IL)
- Patent Number(s):
- US 5604162
- OSTI ID:
- 870840
- Country of Publication:
- United States
- Language:
- English
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