Use of high index substrates to enable dislocation filtering in large mismatch systems

Technical Report · Tue Dec 31 23:00:00 EST 1996

DOI:https://doi.org/10.2172/439011· OSTI ID:439011

Reno, J L; Biefeld, R M; Kurtz, S R; Baucom, K C

We report results in three areas of research relevant to the fabrication of a wide range of optoelectronic devices: The development of a new x-ray diffraction technique that can be used to rapidly determine the optimal period of a strained layer superlattice to maximize the dislocation filtering; The optimal MBE growth parameters for the growth of CdTe on GaAs(211); The determination of the relative efficiency of dislocation filtering in the (211) and (100) orientations; and The surface quality of InSb grown by MOCVD on InSb substrates is affected by the misorientation of the substrate.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 439011
• Report Number(s): SAND--97-0023; ON: DE97002708
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALIGNMENT
ANNEALING
CADMIUM TELLURIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DISLOCATIONS
ETCHING
FABRICATION
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR DETECTORS
STACKING FAULTS
SUBSTRATES
SUPERLATTICES
X-RAY DIFFRACTION