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Title: NbN/AlN/NbN tunnel junctions with high current density up to 54 kA/cm{sup 2}

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.119279· OSTI ID:435083
; ;  [1]
  1. Kansai Advanced Research Center, Communications Research Laboratory, Ministry of Posts and Telecommunications, 588-2 Iwaoka, Iwaoka-cho, Nishi-ku, Kobe 651-24 (Japan)

We report on progress in the development of high current density NbN/AlN/NbN tunnel junctions for applications as submillimeter wave superconductor-insulator-superconductor mixers. A very high current density up to 54 kA/cm{sup 2}, roughly an order of magnitude larger than any reported results for all-NbN tunnel junctions, was achieved in the junctions with about 1 nm thick AlN barriers. The magnetic field and temperature dependence of critical supercurrents were measured to investigate the Josephson tunneling behavior of critical supercurrents in the high-J{sub c} junctions. The junctions showed high-quality junction characteristics with a large gap voltage of 5 mV and sharp quasiparticle current rise ({Delta}V{sub g}=0.1 mV). The R{sub sg}/R{sub N} ratio was about 5 with a V{sub m} value of 14 mV measured at 4.2 K. {copyright} {ital 1997 American Institute of Physics.}

OSTI ID:
435083
Journal Information:
Applied Physics Letters, Vol. 70, Issue 1; Other Information: PBD: Jan 1997
Country of Publication:
United States
Language:
English