Effects of room temperature annealing on the luminescence of electron- irradiated ZnS

Journal Article · Thu Mar 01 04:00:00 EST 1973 · Annu. Rep. Radiat. Center Osaka Prefect., v. 13, pp. 76-78

OSTI ID:4318541

Shono, Y; Yoshida, T

The effects of room temperature annealing on the intensity of the luminescence observed in electron-irradiated ZnS crystal were studied. The luminescence intensity increased as a whole after thc electron-irradiated ZnS crystal was kept at room temperature and decreased by annealing at higher temperatures. Two processes are proposed to explain the increase in the luminescence lntensity caused by room-temperature annealing: one is the process that the defects introduced by electron irradiation associate with other types of imperfections natively contained in the crystal before irradiation and become trapping centers: the other is the process that the defects associate with some radiationless recombination centers and then result in the decrease in the number of the radiationless recombination centers. In either process the migration at room temperature of the defects is essential. (auth)

• Research Organization: Radiation Center of Osaka Prefecture, Sakai, Japan
• NSA Number: NSA-29-021606
• OSTI ID: 4318541
• Journal Information: Annu. Rep. Radiat. Center Osaka Prefect., v. 13, pp. 76-78, Journal Name: Annu. Rep. Radiat. Center Osaka Prefect., v. 13, pp. 76-78; ISSN ARROA
• Country of Publication: Japan
• Language: English

Related Subjects

*ZINC SULFIDES-- PHYSICAL RADIATION EFFECTS
ANNEALING
CRYSTAL DEFECTS
ELECTRON BEAMS
IRRADIATION
KEV RANGE 100-1000
MEDIUM TEMPERATURE
MONOCRYSTALS
N50340* --Metals
Ceramics
& Other Materials--Plastics & Other Materials--Radiation Effects
RECOMBINATION
SPECTRA
TEMPERATURE DEPENDENCE
TRAPPING