Trapped space charges in electron-bombarded insulators

Journal Article · Mon Feb 11 04:00:00 EDT 1974 · J. Phys., D (London), v. 7, no. 3, pp. 435-442

DOI:https://doi.org/10.1088/0022-3727/7/3/310· OSTI ID:4307816

Gibbons, D J

Experimental studies were made on electron-bombarded thin insulating films of ZnS, As/sub 2/S/sub 3/, and doped CdS. Under an applied electric bias field, one of the results of bombardment in the case of the first two is in the buildup of an internal static space charge due to trapped carriers. The speed with which this charge is established and released by electron beam excitation was studied. In the case of CdS, it is found that the dominant result of bombardment is not carrier trapping, but the results lend further support to the suggestion that electron bombardment conducttvity (EBC) in doped CdS is influenced very strongly by the release of carriers already trapped. The simplified model used for volume charge storage leads to other results substantially in agreement with EBC phenomena in ZnS and As/sub 2/S/sub 3/. (auth)

• Research Organization: EMI Ltd., Hayes, Eng.
• NSA Number: NSA-29-027406
• OSTI ID: 4307816
• Journal Information: J. Phys., D (London), v. 7, no. 3, pp. 435-442, Journal Name: J. Phys., D (London), v. 7, no. 3, pp. 435-442; ISSN JPDBA
• Country of Publication: United Kingdom
• Language: English

Related Subjects

*ARSENIC SULFIDES-- PHYSICAL RADIATION EFFECTS
*CADMIUM SULFIDES-- PHYSICAL RADIATION EFFECTS
*ZINC SULFIDES-- PHYSICAL RADIATION EFFECTS
CHARGE CARRIERS
DIELECTRIC MATERIALS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRON BEAMS
FILMS
MATHEMATICAL MODELS
N50340* --Metals
Ceramics
& Other Materials--Plastics & Other Materials--Radiation Effects
SPACE CHARGE
TRAPPING