SPACE CHARGE EFFECTS IN AMBIPOLAR DIFFUSION OF CARRIERS INDUCED BY ELECTRON BOMBARDMENT IN PHOTOCONDUCTING INSULATOR CRYSTALS

Journal Article · Sun Oct 01 04:00:00 EDT 1961 · Phys. and Chem Solids

DOI:https://doi.org/10.1016/0022-3697(61)90217-7· OSTI ID:4833676

Gergely, Gy

An analysis is given of the ambipolar diffusion of carriers induced by electron bombardment. lnduced conductivity and cathodoluminescence in ZnS and CdS crystals are discussed. The distribution of carriers is calculated, considering diffusion, surface recombination, and space charge effects. The effective ambipolar diffusion length is a result of negative space charge accumulated in traps, attracting holes and retarding electrons, preventing them reaching traps located deeper in the bulk and balancing the diffusion current. The negative space charge layer has to be compensated by a positive layer. Formulas are derived for linear and saturating type induced processes. Comparing the theoretical and experimental voltage response curves of cathodoluminescence and induced conductivity, the diffusion length L/sub p/ and surface recombination velocity S of holes can be determined. L/sub p/ =0.1 mu , S = 4 x 10/sup 4/ cm sec/sup -1/ were found on a ZnS-AgCl sample. (auth)

• Research Organization: Research Inst. for Telecommunications, Budapest
• NSA Number: NSA-16-002349
• OSTI ID: 4833676
• Journal Information: Phys. and Chem Solids, Journal Name: Phys. and Chem Solids Vol. Vol: 21
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

CATHODES
CHARGED PARTICLES
CRYSTALS
CURRENTS
DEFECTS
DIAGRAMS
DIELECTRICS
DIFFUSION
DIFFUSION LENGTH
ELECTRIC CHARGES
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRON BEAMS
ELECTRON TUBES
ELECTRONS
EQUATIONS
IRRADIATION
LAYERS
LUMINESCENCE
MEASURED VALUES
NUMERICALS
PHOTOCHEMISTRY
PHOTOELECTRIC EFFECT
PHYSICS
RADIATION EFFECTS
REGENERATION
SILVER CHLORIDES
SPACE CHARGE
SURFACES
TRAPS
VELOCITY
ZINC SULFIDES