Transient grating measurements of ambipolar diffusion and carrier recombination in InGaP/InAlP multiple quantum wells and InGaP bulk
Journal Article
·
· Journal of Electronic Materials
- Colorado State Univ., Fort Collins, CO (United States)
The ambipolar diffusion coefficient and carrier recombination lifetime in InGaP/InAlP multiple quantum wells and InGaP epitaxial layers grown by gas source molecular beam epitaxy have been determined by measuring the diffraction efficiency decay of transient gratings induced by picosecond laser pulses. The multiple quantum well room temperature ambipolar diffusion coefficient of carrier transport parallel to the growth plane was measured to be approximately half that of the bulk material. 17 refs., 2 figs.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 478449
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 3 Vol. 23; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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