Microwave plasma considerations for CVD of diamond films at low substrate temperatures

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:42980

Ulczynski, M; Reinhard, D K; Prystajko, M; Asmussen, J ^[1]

---

1. Michigan State Univ., East Lansing, MI (United States). Dept. of Electrical Engineering

In order to achieve useful growth rates, conventional plasma assisted chemical vapor deposition (CVD) of diamond films uses substrate temperatures which are typically above 750 C. There is considerable interest in achieving high quality diamond film deposition at substantially lower temperatures, while still achieving useful deposition rates. This paper describes the results of operating microwave plasma reactors under conditions such that diamond deposition occurs on silicon substrates at temperatures less than 500 C as measured by optical pyrometry. The microwave reactors are resonant cavities of a design that has been previously used for diamond deposition at high substrate temperatures in which the cavity length is adjusted such that a TM{sub 01n} mode is excited by 2.45 GHz microwave excitation which is coupled to the cavity by an adjustable antenna. The tuning and substrate arrangement is such that the plasma is in direct contact with the substrate on which growth takes place. The paper will describe the dependence of growth rate on deposition parameters, including microwave input power, plasma pressure, gas composition, and substrate height, as well as the correlation with substrate temperature. Results will be presented for two reactors, one with a 10 cm diameter bell jar and the other with a 12.5 cm diameter bell jar.

• OSTI ID: 42980
• Report Number(s): CONF-940604--; ISBN 0-7803-2006-9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAVITY RESONATORS
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
DIAMONDS
MICROWAVE EQUIPMENT
OPERATION