Diamond film formation using RF plasma CVD assisted by water vapor enhanced hydrogen radical source

Conference · Sun Dec 31 04:00:00 EST 1995

OSTI ID:163117

Hiramatsu, M; Yamada, K; Mizuno, E; Nawata, M ^[1]; Ikeda, M; Hori, M; Goto, T ^[2]

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1. Meijo Univ., Tempaku, Nagoya (Japan)
2. Nagoya Univ., Chikusa, Nagoya (Japan)

For the formation of diamond thin films, CH{sub 3} and H radicals have been regarded as the important reactive species. In order to realize thin films of high quality by using plasma enhanced chemical vapor deposition (CVD) method, it is desirable to supply selectively reactive species suitable for the film formation onto the substrate. In this work, the authors report on the development of a unique plasma CVD method, plasma CVD assisted by remote radical source, which is a novel technique to control plasma by changing densities of specific radicals while keeping the electron temperature and electron density almost constant in the plasma. This system consists of three parts, a magnetoactive parallel plate RF plasma reactor, a compact microwave discharge region for a source of H radicals, and a CO{sub 2} laser for the substrate heating. By using this system diamond thin film was successfully synthesized. In addition, the effect of H{sub 2}O addition to the microwave H{sub 2} plasma as the H radical source on the diamond film formation was investigated. It was found that the addition of an appropriate amount of H{sub 2}O to the microwave H{sub 2} plasma enhanced etching of non-diamond phase and selective growth of diamond in the RF plasma at relatively low substrate temperature below 500 C.

• OSTI ID: 163117
• Report Number(s): CONF-950612--; ISBN 0-7803-2669-5
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
DIAMONDS
HIGH-FREQUENCY DISCHARGES
HYDROCARBONS
PLASMA DENSITY