Photoluminescence studies of semiconductor heterostructures in pulsed magnetic fields
Conference
·
OSTI ID:425963
- Northeastern Univ., Boston, MA (United States)
- Los Alamos National Lab., NM (United States)
Photoluminescence spectra of Si {delta}(z)-doped n-type GaAs and AlGaAs/GaAs coupled double quantum wells have been measured in DC fields to 18 Tesla and in pulsed magnetic fields to 50 Tesla at 4.2K. The pulsed field data were obtained in 2 msec. at the peak of the magnetic field. Magneto-exciton transitions were observed in fields perpendicular and parallel to the growth axis of these 2-D electron systems. These results demonstrate the feasibility of making a wide range of spectroscopic studies in ultra-high magnetic fields in extreme quantum limit of low dimensional doped and undoped semiconductor heterostructures.
- OSTI ID:
- 425963
- Report Number(s):
- CONF-9505186--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers
University of California Directed Research and Development (UCDRD) Activities for Fiscal Year 1997`
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
Journal Article
·
Sat Feb 14 23:00:00 EST 2015
· Semiconductors
·
OSTI ID:22470071
University of California Directed Research and Development (UCDRD) Activities for Fiscal Year 1997`
S&T Accomplishment Report
·
Wed Mar 24 23:00:00 EST 1999
·
OSTI ID:763203
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
Journal Article
·
Thu Nov 14 23:00:00 EST 2019
· Semiconductors
·
OSTI ID:22944759