Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
The ion-beam etching of AlGaAs/GaAs heterostructures gives rise to radiation defects and, as a result, leads to photoluminescence quenching. Annealing at 620°C in an atmosphere of As almost completely restores the quantum efficiency of photoluminescence in the case of radiation-induced defects lying at a distance of up to 150 nm from the heterointerface.
- OSTI ID:
- 22944759
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 53; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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