Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure

Journal Article · Fri Dec 14 23:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618140178· OSTI ID:22945140

Mitrofanov, M. I. ^[1]; Voznyuk, G. V. ^[2]; Nikolaev, D. N. ^[1]; Mizerov, M. N. ^[3]; Evtikhiev, V. P. ^[1]

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1. Ioffe Institute (Russian Federation)
2. ITMO University (Russian Federation)
3. Submicron Heterostructures for Microelectronics, Research and Engineering Center (Russian Federation)

We present results of experiments concerning the loss of internal quantum efficiency of the GaAs/AlGaAs heterostructure due to the focused ion beam-induced radiation defects. Firstly we show that 300°C annealing in the high vacuum conditions leads to a partial recovery of the internal quantum efficiency and, therefore, photoluminescence regains some of its intensity. Secondly we show that 620°C annealing in the presence of As vapor leads up to 80% recovery of the internal quantum efficiency depending on the etching depth. Achieved results proves focused ion beam technique to be potent for the fabrication of photonic structures based on A3B5 materials containing active layer.

• OSTI ID: 22945140
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 14 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ANNEALING
ARSENIC
DEFECTS
ETCHING
FABRICATION
GALLIUM ARSENIDES
ION BEAMS
PHOTOLUMINESCENCE
PRESSURE RANGE MICRO PA
QUANTUM EFFICIENCY
RADIATION EFFECTS
VAPORS