Growth of polycrystalline scandium nitride by ECR-MBE
- Boston Univ., MA (United States). Dept. of Electrical and Computer Engineering
- Exxon Research and Engineering Co., Annandale, NJ (United States)
The authors report the growth of polycrystalline scandium nitride (ScN) films by electron cyclotron resonance plasma assisted molecular beam epitaxy (ECR-MBE). The films were grown on (0001) sapphire substrates. The ScN films were found to have the sodium chloride structure (a = 4.5 {angstrom}) with crystals oriented along the (111) direction perpendicular to the substrates. X-ray photoemission spectroscopy (XPS) studies indicate that the films are stoichiometric with no evidence of free scandium metal. Films 1 to 2 {micro}m thick have a deep-red color and transmission measurements indicate a fundamental absorption edge at 2.1 eV. These results are consistent with ScN being a semiconductor, rather than a semimetal.
- OSTI ID:
- 417645
- Report Number(s):
- CONF-960502--; ISBN 1-56677-163-3
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photodetectors using III-V nitrides
Epitaxial growth of GaN films produced by ECR-assisted MBE
Related Subjects
ABSORPTIVITY
CARRIER DENSITY
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELECTRON CYCLOTRON-RESONANCE
EXPERIMENTAL DATA
HALL EFFECT
MOLECULAR BEAM EPITAXY
MORPHOLOGY
ORIENTATION
PHOTOELECTRON SPECTROSCOPY
SAPPHIRE
SCANDIUM NITRIDES
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
X-RAY DIFFRACTION