Characterization of AlGaInN heterostructures grown by OMVPE
Book
·
OSTI ID:417631
- Xerox Palo Alto Research Center, CA (United States). Electronic Materials Lab.
The authors describe the OMVPE growth and characterization of AlGaInN and its heterostructures, including measurements of electrical properties (Hall), optical properties (photo- and cathodo-luminescence), structural characteristics (x-ray diffraction and TEM); and also the emission of InGaN/AlGaN heterostructures subject to optical and electrical pumping.
- Sponsoring Organization:
- Department of Commerce, Washington, DC (United States)
- OSTI ID:
- 417631
- Report Number(s):
- CONF-960502--; ISBN 1-56677-163-3
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
ELECTRONIC EQUIPMENT
EMISSION SPECTRA
EXPERIMENTAL DATA
GALLIUM NITRIDES
INDIUM NITRIDES
MICROSTRUCTURE
OPTICAL PROPERTIES
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION
42 ENGINEERING
ALUMINIUM NITRIDES
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
ELECTRONIC EQUIPMENT
EMISSION SPECTRA
EXPERIMENTAL DATA
GALLIUM NITRIDES
INDIUM NITRIDES
MICROSTRUCTURE
OPTICAL PROPERTIES
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION