Properties of GaN epitaxial layer grown by MOVPE on MgAl{sub 2}O{sub 4} substrate

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:394931

Kuramata, A; Horino, K; Domen, K; Soejima, R; Sudo, H; Tanahashi, T ^[1]

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1. Fujitsu Labs. Ltd., Atsugi (Japan)

The authors propose a MgAl{sub 2}O{sub 4} substrate for GaN-based laser diodes. They grew GaN epitaxial layers using metal-organic vapor phase epitaxy on a MgAl{sub 2}O{sub 4} substrate. The GaN on the MgAl{sub 2}O{sub 4} showed a narrow X-ray diffraction peak of 310 arcsec, a photoluminescence dominated by the band-edge emission, and good electronic properties. The optical cavity was fabricated by cleaving the GaN on the MgAl{sub 2}O{sub 4}, and the stimulated emission from the cavity using optical pumping was observed. They also fabricated a light emitting diode (LED) with a AlGaN/InGaN double-heterostructure. The electroluminescence was dominated by the band-edge emission of InGaN with a narrow FWHM of 13.5 nm. The characteristics of LED on the MgAl{sub 2}O{sub 4} were comparable to that on a Al{sub 2}O{sub 3} substrate. MgAl{sub 2}O{sub 4} is feasible as a substrate for laser applications.

• OSTI ID: 394931
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
AMMONIA
CHEMICAL VAPOR DEPOSITION
CORRELATIONS
ELECTRICAL PROPERTIES
ELECTROLUMINESCENCE
EXPERIMENTAL DATA
FABRICATION
GALLIUM NITRIDES
HYDROGEN
LASER MATERIALS
LAYERS
LIGHT EMITTING DIODES
MORPHOLOGY
OPTICAL PROPERTIES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
SAPPHIRE
SPINELS
X-RAY DIFFRACTION