Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes

Zhang, Kaitian; Hu, Chenxi; Thirupakuzi Vangipuram, Vijay Gopal; Kash, Kathleen; Zhao, Hongping

doi:10.1116/6.0002524

Design of InGaN-ZnSnGa₂N₄ quantum wells for high-efficiency amber light emitting diodes

Journal Article · Wed Apr 12 00:00:00 EDT 2023 · Journal of Vacuum Science and Technology A

DOI:https://doi.org/10.1116/6.0002524· OSTI ID:1968136

Zhang, Kaitian ^[1]; ^[2]; Thirupakuzi Vangipuram, Vijay Gopal ^[3]; ^[2]; ^[3]

The Ohio State Univ., Columbus, OH (United States); The Ohio State University
Case Western Reserve Univ., Cleveland, OH (United States)
The Ohio State Univ., Columbus, OH (United States)

A novel type-II InGaN-ZnSnGa₂N₄ quantum well (QW) structure is proposed based on recent experimental achievements for the successful epitaxy of ZnSnN₂-GaN alloys and the determination of their band offsets with GaN. The simulation results indicate that this structure is promising as the active region for high-efficiency InGaN-based amber (λ ~ 590 nm) light-emitting diodes (LEDs). The hole wavefunction in the valence band is better confined with the insertion of a monolayer scale of ZnSnGa₂N₄ into the InGaN QW while the electron wavefunction in the conduction band is better confined with the incorporation of an AlGaN layer in the GaN quantum barrier. The band structure of the InGaN-ZnSnGa₂N₄ QW is numerically simulated based on the experimentally measured band offsets between ZnSnGa₂N₄ and GaN. With the InGaN-ZnSnGa₂N₄ QW design, a low In content (20%) is required in the InGaN layer to reach a peak emission wavelength of ~590 nm, yet an In composition of 25% is needed to reach the same emission wavelength for a conventional InGaN QW with the same layer thicknesses. Moreover, the electron-hole wavefunction overlap (Гe1-hh1) for the InGaN-ZnSnGa₂N₄ QW design reaches 18% for an emission wavelength at ~590 nm. This result is much improved over the conventional InGaN QW overlap of 5% emitting at the same wavelength. The increase in electron-hole wavefunction overlap results in an approximately 14 times enhancement in the predicted spontaneous emission radiative recombination rate of the InGaN-ZnSnGa₂N₄ QW as compared to that of the conventional InGaN QW. This InGaN-ZnSnGa₂N₄ QW structure design can be promising to pave a new way to achieve high efficiency amber LEDs.

View Accepted Manuscript (DOE)

Research Organization:: The Ohio State Univ., Columbus, OH (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0008718

OSTI ID:: 1968136

Journal Information:: Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 3 Vol. 41; ISSN 0734-2101

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

References (35)

Electronic and lattice dynamical properties of II-IV-N2 semiconductors Punya, Atchara; Paudel, Tula R.; Lambrecht, Walter R. L. physica status solidi (c), Vol. 8, Issue 7-8 https://doi.org/10.1002/pssc.201001147	journal	June 2011
Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm Zhao, Hongping; Arif, Ronald A.; Ee, Yik-Khoon Optical and Quantum Electronics, Vol. 40, Issue 5-6 https://doi.org/10.1007/s11082-007-9177-2	journal	January 2008
Optical properties of type-II InGaN/GaAsN/GaN quantum wells Park, Seoung-Hwan; Lee, Yong-Tak; Park, Jongwoon Optical and Quantum Electronics, Vol. 41, Issue 11-13 https://doi.org/10.1007/s11082-010-9391-1	journal	November 2009
Band Structure Engineering Based on InGaN/ZnGeN₂ Heterostructure Quantum Wells for Visible Light Emitters Karim, Md Rezaul; Dinushi Jayatunga, Benthara Hewage; Zhang, Kaitian Crystal Growth & Design, Vol. 22, Issue 1 https://doi.org/10.1021/acs.cgd.1c00630	journal	November 2021
Pulsed-Mode MOCVD Growth of ZnSn(Ga)N₂ and Determination of the Valence Band Offset with GaN Zhang, Kaitian; Hu, Chenxi; Bhuiyan, A. F. M. Anhar Uddin Crystal Growth & Design, Vol. 22, Issue 8 https://doi.org/10.1021/acs.cgd.2c00511	journal	July 2022
Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport Lv, Quanjiang; Liu, Junlin; Mo, Chunlan ACS Photonics, Vol. 6, Issue 1 https://doi.org/10.1021/acsphotonics.8b01040	journal	December 2018
Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes Fragkos, Ioannis E.; Tan, Chee-Keong; Dierolf, Volkmar Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-15302-y	journal	November 2017
Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides Fragkos, Ioannis E.; Tansu, Nelson Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-31821-8	journal	September 2018
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells Wu, X. H.; Elsass, C. R.; Abare, A. Applied Physics Letters, Vol. 72, Issue 6 https://doi.org/10.1063/1.120844	journal	February 1998
Low-voltage GaN:Er green electroluminescent devices Heikenfeld, J.; Lee, D. S.; Garter, M. Applied Physics Letters, Vol. 76, Issue 11 https://doi.org/10.1063/1.126033	journal	March 2000
Band parameters for nitrogen-containing semiconductors Vurgaftman, I.; Meyer, J. R. Journal of Applied Physics, Vol. 94, Issue 6 https://doi.org/10.1063/1.1600519	journal	September 2003
Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer Park, Jongwoon; Kawakami, Yoichi Applied Physics Letters, Vol. 88, Issue 20, Article No. 202107 https://doi.org/10.1063/1.2205731	journal	May 2006
Optical gain in InGaN∕GaN quantum well structures with embedded AlGaN δ layer Park, Seoung-Hwan; Park, Jongwoon; Yoon, Euijoon Applied Physics Letters, Vol. 90, Issue 2, Article No. 023508 https://doi.org/10.1063/1.2431477	journal	January 2007
Type-II InGaN-GaNAs quantum wells for lasers applications Arif, Ronald A.; Zhao, Hongping; Tansu, Nelson Applied Physics Letters, Vol. 92, Issue 1 https://doi.org/10.1063/1.2829600	journal	January 2008
High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes Park, Seoung-Hwan; Ahn, Doyeol; Kim, Jong-Wook Applied Physics Letters, Vol. 94, Issue 4 https://doi.org/10.1063/1.3075853	journal	January 2009
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes Zhao, Hongping; Liu, Guangyu; Tansu, Nelson Applied Physics Letters, Vol. 97, Issue 13 https://doi.org/10.1063/1.3493188	journal	September 2010
Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells Han, Lu; Kash, Kathleen; Zhao, Hongping Journal of Applied Physics, Vol. 120, Issue 10 https://doi.org/10.1063/1.4962280	journal	September 2016
Design of InGaN-ZnSnN ₂ quantum wells for high-efficiency amber light emitting diodes Karim, Md Rezaul; Zhao, Hongping Journal of Applied Physics, Vol. 124, Issue 3 https://doi.org/10.1063/1.5036949	journal	July 2018
High internal quantum efficiency of long wavelength InGaN quantum wells Marcinkevičius, Saulius; Yapparov, Rinat; Chow, Yi Chao Applied Physics Letters, Vol. 119, Issue 7 https://doi.org/10.1063/5.0063237	journal	August 2021
Yellow–red emission from (Ga,In)N heterostructures Damilano, B.; Gil, B. Journal of Physics D: Applied Physics, Vol. 48, Issue 40 https://doi.org/10.1088/0022-3727/48/40/403001	journal	September 2015
Experimental determination of the valence band offsets of ZnGeN ₂ and (ZnGe) _0.94 Ga _0.12 N ₂ with GaN Karim, Md Rezaul; Noesges, Brenton A.; Jayatunga, Benthara Hewage Dinushi Journal of Physics D: Applied Physics, Vol. 54, Issue 24 https://doi.org/10.1088/1361-6463/abee45	journal	March 2021
Excitation Efficiency and Limitations of the Luminescence of Eu3+ Ions in GaN Timmerman, D.; Mitchell, B.; Ichikawa, S. Physical Review Applied, Vol. 13, Issue 1 https://doi.org/10.1103/PhysRevApplied.13.014044	journal	January 2020
Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors Park, Seoung-Hwan; Chuang, Shun-Lien Physical Review B, Vol. 59, Issue 7 https://doi.org/10.1103/PhysRevB.59.4725	journal	February 1999
Accurate calculation of polarization-related quantities in semiconductors Bernardini, Fabio; Fiorentini, Vincenzo; Vanderbilt, David Physical Review B, Vol. 63, Issue 19 https://doi.org/10.1103/PhysRevB.63.193201	journal	April 2001
Band offsets between ZnGeN 2 , GaN, ZnO, and ZnSnN 2 and their potential impact for solar cells Punya, Atchara; Lambrecht, Walter R. L. Physical Review B, Vol. 88, Issue 7 https://doi.org/10.1103/PhysRevB.88.075302	journal	August 2013
Erratum: Band offsets between ZnGeN 2 , GaN, ZnO, and ZnSnN 2 and their potential impact for solar cells [Phys. Rev. B 88 , 075302 (2013)] Jaroenjittichai, Atchara P.; Lyu, Sai; Lambrecht, Walter R. L. Physical Review B, Vol. 96, Issue 7 https://doi.org/10.1103/PhysRevB.96.079907	journal	August 2017
Suppression of Nonradiative Recombination by V-Shaped Pits in GaInN / GaN Quantum Wells Produces a Large Increase in the Light Emission Efficiency Hangleiter, A.; Hitzel, F.; Netzel, C. Physical Review Letters, Vol. 95, Issue 12 https://doi.org/10.1103/PhysRevLett.95.127402	journal	September 2005
Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes Zhao, Hongping; Arif, Ronald A.; Ee, Yik-Khoon IEEE Journal of Quantum Electronics, Vol. 45, Issue 1 https://doi.org/10.1109/JQE.2008.2004000	journal	January 2009
Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes Arif, Ronald A.; Zhao, Hongping; Ee, Yik-Khoon IEEE Journal of Quantum Electronics, Vol. 44, Issue 6, p. 573-580 https://doi.org/10.1109/JQE.2008.918309	journal	June 2008
Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm Zhao, H.; Arif, R. A.; Tansu, N. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, Issue 4, p. 1104-1114 https://doi.org/10.1109/JSTQE.2009.2016576	journal	July 2009
Demonstration of Nonpolar m -Plane InGaN/GaN Laser Diodes Schmidt, Mathew C.; Kim, Kwang-Choong; Farrell, Robert M. Japanese Journal of Applied Physics, Vol. 46, Issue 9, p. L190-L191 https://doi.org/10.1143/JJAP.46.L190	journal	February 2007
Continuous-wave Operation of AlGaN-cladding-free Nonpolar m -Plane InGaN/GaN Laser Diodes Farrell, Robert M.; Feezell, Daniel F.; Schmidt, Mathew C. Japanese Journal of Applied Physics, Vol. 46, Issue 32, p. L761-L763 https://doi.org/10.1143/JJAP.46.L761	journal	April 2007
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells Zhao, Hongping; Liu, Guangyu; Zhang, Jing Optics Express, Vol. 19, Issue S4 https://doi.org/10.1364/OE.19.00A991	journal	January 2011
High luminous efficacy green light-emitting diodes with AlGaN cap layer Alhassan, Abdullah I.; Farrell, Robert M.; Saifaddin, Burhan Optics Express, Vol. 24, Issue 16 https://doi.org/10.1364/OE.24.017868	journal	January 2016
Efficient InGaN-based yellow-light-emitting diodes Jiang, Fengyi; Zhang, Jianli; Xu, Longquan Photonics Research, Vol. 7, Issue 2 https://doi.org/10.1364/PRJ.7.000144	journal	January 2019

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42 ENGINEERING
Electronic band structure
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