Ellipsometric studies of polycrystalline molybdenum silicide thin films

Journal Article · Fri Nov 01 04:00:00 EST 1996 · Materials Research Bulletin

DOI:https://doi.org/10.1016/0025-5408(96)00137-7· OSTI ID:415469

Srinivas, G; Vankar, V D ^[1]

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1. Indian Inst. of Tech., Delhi (India). Thin Film Lab.

Systematic ellipsometric studies of MoSi{sub 2} (tetragonal) thin films formed by RTA processing of cosputtered Mo{sub 25}Si{sub 75}, Mo{sub 30}Si{sub 70}, and Mo{sub 36}Si{sub 64} thin films are discussed. The optical properties of these films in the measured spectral range 1.3--5.3 eV were observed to be dominated by the microstructural variations such as due to the changes in density, oxide overlayer thickness and composition, surface roughness, and redistribution of available excess silicon (after formation of MoSi{sub 2} (tetragonal) phase). These microstructural variations indicated modification of interfaces and significant change in conductivity, which were corroborated in the AES depth profiles and the electrical resistivity measurements.

• OSTI ID: 415469
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 11 Vol. 31; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
AUGER ELECTRON SPECTROSCOPY
CHEMICAL COMPOSITION
DENSITY
ELECTRIC CONDUCTIVITY
INTERFACES
MICROSTRUCTURE
MOLYBDENUM SILICIDES
OPTICAL PROPERTIES
ROUGHNESS
SILICON
SPUTTERING
SUBSTRATES
TETRAGONAL LATTICES
X-RAY DIFFRACTION